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3DD6E Specs and Replacement


   Type Designator: 3DD6E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 3DD6E Transistor Equivalent Substitute - Cross-Reference Search

   

3DD6E detailed specifications

 ..1. Size:221K  inchange semiconductor
 3dd6e.pdf pdf_icon

3DD6E

isc Silicon NPN Power Transistor 3DD6E DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =10(Min)@I = 2.5A FE C Low Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which c... See More ⇒

 0.1. Size:110K  china
 3dd6e-t.pdf pdf_icon

3DD6E

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Detailed specifications: TMPTA63 , TMPTA64 , TMPTA70 , TMPTA92 , TMPTA93 , TMPTH81 , 2SD1047-247 , 3CD010G , TIP3055 , ISCN341N , ISCP233N , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 .

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