3DD6E Datasheet. Specs and Replacement

Type Designator: 3DD6E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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3DD6E datasheet

 ..1. Size:221K  inchange semiconductor

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3DD6E

isc Silicon NPN Power Transistor 3DD6E DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =10(Min)@I = 2.5A FE C Low Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which c... See More ⇒

 0.1. Size:110K  china

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3DD6E

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Detailed specifications: TMPTA63, TMPTA64, TMPTA70, TMPTA92, TMPTA93, TMPTH81, 2SD1047-247, 3CD010G, 2N3906, ISCN341N, ISCP233N, KSE340J, KSE350J, KSH13005, 2SC3866A, 3DK501D, 3DA77

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