ISCN341N Datasheet. Specs and Replacement

Type Designator: ISCN341N  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 720 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PN

  📄📄 Copy 

 ISCN341N Substitution

- BJT ⓘ Cross-Reference Search

 

ISCN341N datasheet

 ..1. Size:260K  inchange semiconductor

iscn341n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO ... See More ⇒

 9.1. Size:252K  inchange semiconductor

iscn372n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 9.2. Size:251K  inchange semiconductor

iscn366p.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

 9.3. Size:228K  inchange semiconductor

iscn372m.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

Detailed specifications: TMPTA64, TMPTA70, TMPTA92, TMPTA93, TMPTH81, 2SD1047-247, 3CD010G, 3DD6E, BD679, ISCP233N, KSE340J, KSE350J, KSH13005, 2SC3866A, 3DK501D, 3DA77, 3DF5B

Keywords - ISCN341N pdf specs

 ISCN341N cross reference

 ISCN341N equivalent finder

 ISCN341N pdf lookup

 ISCN341N substitution

 ISCN341N replacement