All Transistors. ISCN341N Datasheet

 

ISCN341N Datasheet and Replacement


   Type Designator: ISCN341N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 720 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3PN
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ISCN341N Datasheet (PDF)

 ..1. Size:260K  inchange semiconductor
 iscn341n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistors ISCN341NDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 450V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 720 VCBOV Collector-Emitter Voltage 450 VCEO

 9.1. Size:252K  inchange semiconductor
 iscn372n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372NDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.2. Size:251K  inchange semiconductor
 iscn366p.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN366PDESCRIPTIONDC Current Gain-: h = 20-60@I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

 9.3. Size:228K  inchange semiconductor
 iscn372m.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372MDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | 2N6221 | 2SD1781KFRA | 2N718A | 2N4033 | 2SA373

Keywords - ISCN341N transistor datasheet

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