ISCN341N Todos los transistores

 

ISCN341N Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISCN341N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 720 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO3PN
 

 Búsqueda de reemplazo de ISCN341N

   - Selección ⓘ de transistores por parámetros

 

ISCN341N PDF detailed specifications

 ..1. Size:260K  inchange semiconductor
 iscn341n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO ... See More ⇒

 9.1. Size:252K  inchange semiconductor
 iscn372n.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 9.2. Size:251K  inchange semiconductor
 iscn366p.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

 9.3. Size:228K  inchange semiconductor
 iscn372m.pdf pdf_icon

ISCN341N

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

SHOW MORE

Otros transistores... TMPTA64 , TMPTA70 , TMPTA92 , TMPTA93 , TMPTH81 , 2SD1047-247 , 3CD010G , 3DD6E , D882 , ISCP233N , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B .

History: MMBT3642

 

 
Back to Top

 


 
.