ISCN341N Todos los transistores

 

ISCN341N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCN341N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 720 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO3PN

Búsqueda de reemplazo de transistor bipolar ISCN341N

 

ISCN341N Datasheet (PDF)

..1. iscn341n.pdf Size:260K _inchange_semiconductor

ISCN341N
ISCN341N

isc Silicon NPN Power Transistors ISCN341NDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 450V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 720 VCBOV Collector-Emitter Voltage 450 VCEO

9.1. iscn372m.pdf Size:228K _inchange_semiconductor

ISCN341N
ISCN341N

isc Silicon NPN Power Transistor ISCN372MDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

9.2. iscn366p.pdf Size:251K _inchange_semiconductor

ISCN341N
ISCN341N

isc Silicon NPN Power Transistor ISCN366PDESCRIPTIONDC Current Gain-: h = 20-60@I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

 9.3. iscn372n.pdf Size:252K _inchange_semiconductor

ISCN341N
ISCN341N

isc Silicon NPN Power Transistor ISCN372NDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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