B647A-D Datasheet, Equivalent, Cross Reference Search

   Type Designator: B647A-D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 190 V
   Maximum Collector-Emitter Voltage |Vce|: 165 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92L

B647A-D Transistor Equivalent Substitute - Cross-Reference Search

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