All Transistors. S8550MG-D Datasheet

 

S8550MG-D Datasheet and Replacement


   Type Designator: S8550MG-D
   SMD Transistor Code: GY4D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.45 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT23
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S8550MG-D Datasheet (PDF)

 7.1. Size:704K  blue-rocket-elect
 s8550mg.pdf pdf_icon

S8550MG-D

S8550MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050MG Complementary pair with S8050MG.HF Product. / Applications Power amplifier applications. / Equivalent Circu

 8.1. Size:665K  blue-rocket-elect
 s8550m.pdf pdf_icon

S8550MG-D

S8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050M Complementary pair with S8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning

 8.2. Size:136K  foshan
 3cg8550m s8550m.pdf pdf_icon

S8550MG-D

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RTAN230C | TSC5327CZ | MP3564 | DRA2514E | MMS8550 | NSV60601MZ4T1G | UN9110S

Keywords - S8550MG-D transistor datasheet

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