DZT5551Q Datasheet, Equivalent, Cross Reference Search
Type Designator: DZT5551Q
SMD Transistor Code: K4N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT223
DZT5551Q Transistor Equivalent Substitute - Cross-Reference Search
DZT5551Q Datasheet (PDF)
dzt5551q.pdf
DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT223 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Ter
dzt5551.pdf
DZT5551160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals: Finish -
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
