DZT5551Q Datasheet. Specs and Replacement
Type Designator: DZT5551Q
SMD Transistor Code: K4N
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT223
DZT5551Q Substitution
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DZT5551Q datasheet
DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT223 stringent requirements of Automotive Applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Features Ter... See More ⇒
DZT5551 160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case SOT223 Case material molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals Finish - ... See More ⇒
Detailed specifications: DCP56, DCP56-16, DCX53, DCX53-16, DCX56, DCX56-16, DDC143XU, DNLS350, TIP41, FMMT459Q, FMMT491Q, FMMT560Q, FZT653Q, MMDT2227Q, ZXTN2005ZQ, ZXTN3035CLP, ZXTN4240F
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