All Transistors. DZT5551Q Datasheet

 

DZT5551Q Datasheet and Replacement


   Type Designator: DZT5551Q
   SMD Transistor Code: K4N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT223
 

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DZT5551Q Datasheet (PDF)

 ..1. Size:486K  diodes
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DZT5551Q

DZT5551Q 160V NPN VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT223 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Ter

 7.1. Size:149K  diodes
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DZT5551Q

DZT5551160V NPN VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 160V Case: SOT223 Case material: molded plastic. Green molding compound. BVEBO > 6V UL Flammability Rating 94V-0 IC = 600mA Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max @10mA) Terminals: Finish -

Datasheet: DCP56 , DCP56-16 , DCX53 , DCX53-16 , DCX56 , DCX56-16 , DDC143XU , DNLS350 , A1015 , FMMT459Q , FMMT491Q , FMMT560Q , FZT653Q , MMDT2227Q , ZXTN2005ZQ , ZXTN3035CLP , ZXTN4240F .

History: 2SB507 | 637BCA | TIP112G | FT008A

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