RD9FE Datasheet. Specs and Replacement

Type Designator: RD9FE

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 42 V

Maximum Collector-Emitter Voltage |Vce|: 22 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO126

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RD9FE datasheet

 ..1. Size:212K  shenzhen

 rd9fe.pdf pdf_icon

RD9FE

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors RD9FE TRANSISTOR (NPN) TO-126 FEATURES Audio amplifier Flash unit of camera 1. EMITTER Switching circuit 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22... See More ⇒

 ..2. Size:212K  haolin elec

 rd9fe.pdf pdf_icon

RD9FE

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors RD9FE TRANSISTOR (NPN) TO-126 FEATURES Audio amplifier Flash unit of camera 1. EMITTER Switching circuit 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22... See More ⇒

Detailed specifications: FZT653Q, MMDT2227Q, ZXTN2005ZQ, ZXTN3035CLP, ZXTN4240F, ZXTP2009ZQ, HR13003, HT13003, TIP42C, BF850BF, BC857BF, BC858BL3, BF776, BFP182R, BFP182W, BFP183W, BFP193W

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