BF776 Datasheet, Equivalent, Cross Reference Search
Type Designator: BF776
SMD Transistor Code: R3*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 46000 MHz
Collector Capacitance (Cc): 0.09 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT343
BF776 Transistor Equivalent Substitute - Cross-Reference Search
BF776 Datasheet (PDF)
bf776.pdf
BF776High Performance NPN Bipolar RF Transistor High performance low noise amplifier3 Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz241 For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands Easy to use standard package with visible leads Pb-free (RoHS compliant) packageESD (El
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: MJ3041 | DTC123JE | 2SC3708R | CIL216
History: MJ3041 | DTC123JE | 2SC3708R | CIL216
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