BF776 Datasheet. Specs and Replacement
Type Designator: BF776
SMD Transistor Code: R3*
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 46000 MHz
Collector Capacitance (Cc): 0.09 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT343
BF776 Substitution
- BJT ⓘ Cross-Reference Search
BF776 datasheet
BF776 High Performance NPN Bipolar RF Transistor High performance low noise amplifier 3 Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz 2 4 1 For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands Easy to use standard package with visible leads Pb-free (RoHS compliant) package ESD (El... See More ⇒
Detailed specifications: ZXTN4240F, ZXTP2009ZQ, HR13003, HT13003, RD9FE, BF850BF, BC857BF, BC858BL3, TIP31C, BFP182R, BFP182W, BFP183W, BFP193W, BFP196, BFP405, BFP405F, BFP410
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