BFP410 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP410
SMD Transistor Code: AK*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 18000 MHz
Collector Capacitance (Cc): 0.09 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT343
BFP410 Transistor Equivalent Substitute - Cross-Reference Search
BFP410 Datasheet (PDF)
bfp410.pdf
BFP410Low Noise Silicon Bipolar RF Transistor Low current device suitable e.g. for handhelds3 For high frequency oscillators e.g. DRO for LNB241 For ISM band applications like Automatic Meter Reading, Sensors etc. Transit frequency fT = 25 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .