BFP410 Datasheet. Specs and Replacement
Type Designator: BFP410
SMD Transistor Code: AK*
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 18000 MHz
Collector Capacitance (Cc): 0.09 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT343
BFP410 Substitution
- BJT ⓘ Cross-Reference Search
BFP410 datasheet
BFP410 Low Noise Silicon Bipolar RF Transistor Low current device suitable e.g. for handhelds 3 For high frequency oscillators e.g. DRO for LNB 2 4 1 For ISM band applications like Automatic Meter Reading, Sensors etc. Transit frequency fT = 25 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q1... See More ⇒
Detailed specifications: BF776, BFP182R, BFP182W, BFP183W, BFP193W, BFP196, BFP405, BFP405F, A733, BFP420, BFP450, BFP520F, BFP540, BFP540ESD, BFP540FESD, BFP640, BFP640ESD
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