BFP650F Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP650F
SMD Transistor Code: R5*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 42000 MHz
Collector Capacitance (Cc): 0.26 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TSFP4-1
BFP650F Transistor Equivalent Substitute - Cross-Reference Search
BFP650F Datasheet (PDF)
bfp650f.pdf
BFP650FLow profile linear silicon NPN RF bipolar transistorProduct descriptionThe BFP650F is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz along with its linearity characteristics make the device suitable for oscillators. Itremains cost competitive without compromisi
bfp650.pdf
BFP650High Linearity Silicon Germanium Bipolar RF TransistorData SheetRevision 1.1, 2012-09-13RF & Protection DevicesEdition 2012-09-13Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or character
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
