All Transistors. BFP760 Datasheet


BFP760 Datasheet, Equivalent, Cross Reference Search

Type Designator: BFP760

SMD Transistor Code: R6*

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.24 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 45000 MHz

Collector Capacitance (Cc): 0.13 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT343

BFP760 Transistor Equivalent Substitute - Cross-Reference Search


BFP760 Datasheet (PDF)

..1. bfp760.pdf Size:831K _infineon

BFP760 BFP760

BFP760Low Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 1.1, 2013-08-05RF & Protection DevicesEdition 2013-08-05Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristic

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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