BFP760 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP760
SMD Transistor Code: R6*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45000 MHz
Collector Capacitance (Cc): 0.13 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT343
BFP760 Transistor Equivalent Substitute - Cross-Reference Search
BFP760 Datasheet (PDF)
..1. Size:831K infineon
bfp760.pdf
bfp760.pdf
BFP760Low Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 1.1, 2013-08-05RF & Protection DevicesEdition 2013-08-05Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
