BFQ790 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ790
SMD Transistor Code: R3
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 6.1 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
BFQ790 Transistor Equivalent Substitute - Cross-Reference Search
BFQ790 Datasheet (PDF)
..1. Size:479K infineon
bfq790.pdf
bfq790.pdf
BFQ790High Linearity RF Medium Power AmplifierProduct descriptionThe BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and costeffective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in highlinearity applications.Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
