All Transistors. BFQ790 Datasheet


BFQ790 Datasheet, Equivalent, Cross Reference Search

Type Designator: BFQ790

SMD Transistor Code: R3

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector-Emitter Voltage |Vce|: 6.1 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20000 MHz

Collector Capacitance (Cc): 1.1 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

BFQ790 Transistor Equivalent Substitute - Cross-Reference Search


BFQ790 Datasheet (PDF)

..1. bfq790.pdf Size:479K _infineon

BFQ790 BFQ790

BFQ790High Linearity RF Medium Power AmplifierProduct descriptionThe BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and costeffective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in highlinearity applications.Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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