All Transistors. BFQ790 Datasheet

 

BFQ790 Datasheet and Replacement


   Type Designator: BFQ790
   SMD Transistor Code: R3
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 6.1 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT89
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BFQ790 Datasheet (PDF)

 ..1. Size:479K  infineon
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BFQ790

BFQ790High Linearity RF Medium Power AmplifierProduct descriptionThe BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and costeffective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in highlinearity applications.Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DRA2114Y | 40466 | 2SC2752Y | BC53-16PAS | BC860CMTF | FTB1386 | 2SD189

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