BFQ790 Specs and Replacement
Type Designator: BFQ790
SMD Transistor Code: R3
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 6.1 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
BFQ790 Substitution
BFQ790 datasheet
bfq790.pdf
BFQ790 High Linearity RF Medium Power Amplifier Product description The BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in high linearity applications. Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 ... See More ⇒
Detailed specifications: BFP740FESD , BFP760 , BFP780 , BFP840ESD , BFP840FESD , BFP842ESD , BFP843 , BFP843F , A1013 , BFR193F , BFR193L3 , BFR193W , BFR360L3 , BFR380F , BFR740EL3 , BFR740L3RH , BFR840L3RHESD .
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