2SA1197 Specs and Replacement
Type Designator: 2SA1197
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3500
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SA1197 datasheet
8.3. Size:118K rohm
2sa1199.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:34K hitachi
2sa1193.pdf
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak ... See More ⇒
8.5. Size:45K hitachi
2sa1190 2sa1191.pdf
2SA1190, 2SA1191 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Em... See More ⇒
8.6. Size:35K hitachi
2sa1193k.pdf
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak ... See More ⇒
8.7. Size:35K hitachi
2sa1194.pdf
2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A Collector peak current IC(peak) 2 A C... See More ⇒
8.8. Size:148K jmnic
2sa1195.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYM... See More ⇒
8.9. Size:161K inchange semiconductor
2sa1195.pdf
isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION Low Collector Saturation Voltage High voltage Complement to Type 2SC2483 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Co... See More ⇒
Detailed specifications: 2SA119, 2SA1190, 2SA1191, 2SA1193, 2SA1194, 2SA1194K, 2SA1195, 2SA1196, A1941, 2SA1198, 2SA1198S, 2SA1199, 2SA1199S, 2SA12, 2SA120, 2SA1200, 2SA1201
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