All Transistors. 2SA1199S Datasheet

 

2SA1199S Datasheet and Replacement


   Type Designator: 2SA1199S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SPT
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2SA1199S Datasheet (PDF)

 ..1. Size:105K  1
 2sa1198s 2sa1199s.pdf pdf_icon

2SA1199S

 7.1. Size:118K  rohm
 2sa1199.pdf pdf_icon

2SA1199S

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.1. Size:126K  toshiba
 2sa1195.pdf pdf_icon

2SA1199S

 8.2. Size:34K  hitachi
 2sa1193.pdf pdf_icon

2SA1199S

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

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Datasheet: 2SA1194 , 2SA1194K , 2SA1195 , 2SA1196 , 2SA1197 , 2SA1198 , 2SA1198S , 2SA1199 , BC548 , 2SA12 , 2SA120 , 2SA1200 , 2SA1201 , 2SA1202 , 2SA1203 , 2SA1204 , 2SA1205 .

History: 2N358A

Keywords - 2SA1199S transistor datasheet

 2SA1199S cross reference
 2SA1199S equivalent finder
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