LBTP180Y3T1G Datasheet. Specs and Replacement
Type Designator: LBTP180Y3T1G
SMD Transistor Code: E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
LBTP180Y3T1G Substitution
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LBTP180Y3T1G datasheet
LBTP180Y3T1G S-LBTP180Y3T1G PNP medium power transistors 1 2 1. FEATURES 3 High current Low voltage SOT89 We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 2 unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 2.APPLICATIONS 3... See More ⇒
Detailed specifications: LBSS4240LT3G, LBSS4250Y3T1G, LBSS4350SY3T1G, LBSS5240LT3G, LBSS5250Y3T1G, LBSS5350SY3T1G, LBTN180Y3T1G, LBTN180Z4TZHG, 431, LBTP460Z4TZHG, LDTA114EET1G, LDTA114TET1G, LDTA114YET1G, LDTA115EET1G, LDTA123EET1G, LDTA123JET1G, LDTA124EET1G
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