LBTP180Y3T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBTP180Y3T1G
SMD Transistor Code: E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
LBTP180Y3T1G Transistor Equivalent Substitute - Cross-Reference Search
LBTP180Y3T1G Datasheet (PDF)
lbtp180y3t1g.pdf
LBTP180Y3T1GS-LBTP180Y3T1GPNP medium power transistors121. FEATURES3High currentLow voltageSOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPAP capable.12.APPLICATIONS3
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: LBC807-25WT1G | 2N1658
History: LBC807-25WT1G | 2N1658
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050