All Transistors. LMBT6517LT3G Datasheet

 

LMBT6517LT3G Datasheet and Replacement


   Type Designator: LMBT6517LT3G
   SMD Transistor Code: 1Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
 

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LMBT6517LT3G Datasheet (PDF)

 ..1. Size:248K  lrc
lmbt6517lt1g lmbt6517lt3g.pdf pdf_icon

LMBT6517LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO

 4.1. Size:248K  lrc
lmbt6517lt1g.pdf pdf_icon

LMBT6517LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsNPN SiliconLMBT6517LT1GWe declare that the material of productS-LMBT6517LT1Gcompliance with RoHS requirements.Ordering Information3Device Marking ShippingLMBT6 517LT1G3000/Tape&Reel1ZS-LMBT6 517LT1G 1LMBT6517LT3G10000/Tape&Reel1Z2S-LMBT6517LT3GSOT23 MAXIMUM RATINGSRating Symbol Value Unit3COLLECTO

 8.1. Size:248K  lrc
lmbt6520lt1g lmbt6520lt3g.pdf pdf_icon

LMBT6517LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&

 8.2. Size:248K  lrc
lmbt6520lt1g.pdf pdf_icon

LMBT6517LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBT6520LT1GWe declare that the material of productcompliance with RoHS requirements. S-LMBT6520LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3Ordering Information1Device Marking Shipping2LMBT6520LT1G3000/Tape&

Datasheet: LMBT5401DW1T3G , LMBT5401LT3G , LMBT5541DW1T3G , LMBT5550LT1G , LMBT5550LT3G , LMBT5551DW1T3G , LMBT5551LT3G , LMBT6428LT3G , A940 , LMBT6520LT3G , LMBTA42LT3G , LMBTA43LT3G , LMBTA56LT3G , LMBTA92LT3G , LMBTA93LT1G , LMBTA93LT3G , LMBTH10LT3G .

History: 2SC519 | CPS1545B | KRX102E | 3DD4 | DDTC143TCA | 40319 | 2SC4606

Keywords - LMBT6517LT3G transistor datasheet

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