KBT5401C Datasheet, Equivalent, Cross Reference Search
Type Designator: KBT5401C
SMD Transistor Code: NFN*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
KBT5401C Transistor Equivalent Substitute - Cross-Reference Search
KBT5401C Datasheet (PDF)
..1. Size:6784K kodenshi
kbt5401c.pdf
kbt5401c.pdf
KBT5401C PNP Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose ampli
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .