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KBT5401C PDF Specs and Replacement


   Type Designator: KBT5401C
   SMD Transistor Code: NFN*
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

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KBT5401C PDF detailed specifications

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KBT5401C

KBT5401C PNP Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose ampli... See More ⇒

Detailed specifications: KBC807-25 , KBC807-40 , KBC817-16 , KBC817-25 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , 2SC2655 , KBT5551C , KC5343S , KC5344S , KS8050L-B , KS8050L-C , KS8050L-D , KS8550L-B , KS8550L-C .

History: 2SC1175NP | 2SC1173Y | UN4121

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