All Transistors. KBT5551C Datasheet

 

KBT5551C Datasheet, Equivalent, Cross Reference Search

Type Designator: KBT5551C

SMD Transistor Code: FNF*

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

KBT5551C Transistor Equivalent Substitute - Cross-Reference Search

 

KBT5551C Datasheet (PDF)

..1. kbt5551c.pdf Size:6779K _kodenshi

KBT5551C KBT5551C

KBT5551C NPN Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , 2SC2383 , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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