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KBT5551C Specs and Replacement

Type Designator: KBT5551C

SMD Transistor Code: FNF*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

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KBT5551C datasheet

 ..1. Size:6779K  kodenshi

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KBT5551C

KBT5551C NPN Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli... See More ⇒

Detailed specifications: KBC807-40 , KBC817-16 , KBC817-25 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , KBT5401C , D880 , KC5343S , KC5344S , KS8050L-B , KS8050L-C , KS8050L-D , KS8550L-B , KS8550L-C , KS8550L-D .

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