KBT5551C PDF and Equivalents Search

 

KBT5551C Specs and Replacement


   Type Designator: KBT5551C
   SMD Transistor Code: FNF*
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT23
 

 KBT5551C Substitution

   - BJT ⓘ Cross-Reference Search

   

KBT5551C datasheet

 ..1. Size:6779K  kodenshi
 kbt5551c.pdf pdf_icon

KBT5551C

KBT5551C NPN Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli... See More ⇒

Detailed specifications: KBC807-40 , KBC817-16 , KBC817-25 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , KBT5401C , D880 , KC5343S , KC5344S , KS8050L-B , KS8050L-C , KS8050L-D , KS8550L-B , KS8550L-C , KS8550L-D .

Keywords - KBT5551C pdf specs

 KBT5551C cross reference
 KBT5551C equivalent finder
 KBT5551C pdf lookup
 KBT5551C substitution
 KBT5551C replacement

 

 
Back to Top

 


 
.