KBT5551C Datasheet and Replacement
Type Designator: KBT5551C
SMD Transistor Code: FNF*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
KBT5551C Substitution
KBT5551C Datasheet (PDF)
kbt5551c.pdf

KBT5551C NPN Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose ampli
Datasheet: KBC807-40 , KBC817-16 , KBC817-25 , KBC817-40 , KBT2222AC , KBT2907AC , KBT3904C , KBT5401C , 2SD669A , KC5343S , KC5344S , KS8050L-B , KS8050L-C , KS8050L-D , KS8550L-B , KS8550L-C , KS8550L-D .
History: BD436 | 2N5773 | 2N778 | 2N5772 | 2SC3553 | BD896 | C2383A-R
Keywords - KBT5551C transistor datasheet
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History: BD436 | 2N5773 | 2N778 | 2N5772 | 2SC3553 | BD896 | C2383A-R



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