NSVF3007SG3 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVF3007SG3
SMD Transistor Code: GM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MCPH3
NSVF3007SG3 Transistor Equivalent Substitute - Cross-Reference Search
NSVF3007SG3 Datasheet (PDF)
..1. Size:485K onsemi
nsvf3007sg3.pdf
nsvf3007sg3.pdf
NSVF3007SG3 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 30 mA Features fT = 8 GHz ty
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