NSVF3007SG3 Specs and Replacement

Type Designator: NSVF3007SG3

SMD Transistor Code: GM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6000 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: MCPH3

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NSVF3007SG3 datasheet

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NSVF3007SG3

NSVF3007SG3 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 30 mA Features fT = 8 GHz ty... See More ⇒

Detailed specifications: NSVBC856BM3, NSVBCH807-16L, NSVBCH807-25L, NSVBCH807-40L, NSVBCH817-16L, NSVBCH817-25L, NSVBCH817-40L, NSVBT2222ADW1, 2SC945, NSVF4009SG4, NSVF4015SG4, NSVF4017SG4, NSVF4020SG4, NSVF5488SK, NSVF5490SK, NSVF6001SB6, NSVF6003SB6

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