NSVUMC3NT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVUMC3NT1G
SMD Transistor Code: U3*
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT353
NSVUMC3NT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVUMC3NT1G Datasheet (PDF)
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UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
