NSVUMC3NT1G Specs and Replacement

Type Designator: NSVUMC3NT1G

SMD Transistor Code: U3*

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT353

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NSVUMC3NT1G datasheet

 ..1. Size:173K  onsemi

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NSVUMC3NT1G

UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http //onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC-88A/SOT-353 CASE 419A NPN and PNP Silicon Surface Mount STYLE 6 Transistors with Monolithic Bias Resistor Network 31 2 R1 R2 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of t... See More ⇒

 9.1. Size:135K  onsemi

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NSVUMC3NT1G

UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount www.onsemi.com Features High Voltage and High Current VCEO = 50 V, IC = 200 mA (6) (5) (4) High hFE hFE = 200X400 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A Q1 Q2 ESD Rating - Machine Model C NSV Prefix for Automotive and Other Applications Requiri... See More ⇒

Detailed specifications: NSVMMBT5401L, NSVMMBT6520L, NSVMMBTH10L, NSVMSD1819A-RT1G, NSVS50030SB3, NSVS50031SB3, NSVT1418L, NSVUMC2NT1G, BC556, NSVUMC5NT2G, NSVUMZ1NT1G, PN2222ABU, PN2222ATA, PN2222ATF, PN2222ATFR, PN2907ABU, PN2907ATA

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