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NSVUMZ1NT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSVUMZ1NT1G
   SMD Transistor Code: 3Z*
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.187 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 114 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC88

 NSVUMZ1NT1G Transistor Equivalent Substitute - Cross-Reference Search

   

NSVUMZ1NT1G Datasheet (PDF)

 ..1. Size:135K  onsemi
umz1nt1g nsvumz1nt1g.pdf

NSVUMZ1NT1G
NSVUMZ1NT1G

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri

 9.1. Size:173K  onsemi
umc2nt1g nsvumc2nt1g umc3nt1g nsvumc3nt1g umc3nt2g umc5nt1g umc5nt2g nsvumc5nt2g.pdf

NSVUMZ1NT1G
NSVUMZ1NT1G

UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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