NSVUMZ1NT1G Datasheet and Replacement
Type Designator: NSVUMZ1NT1G
SMD Transistor Code: 3Z*
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.187 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 114 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SC88
NSVUMZ1NT1G Substitution
NSVUMZ1NT1G Datasheet (PDF)
umz1nt1g nsvumz1nt1g.pdf

UMZ1NT1GComplementary DualGeneral PurposeAmplifier TransistorPNP and NPN Surface Mountwww.onsemi.comFeatures High Voltage and High Current: VCEO = 50 V, IC = 200 mA(6) (5) (4) High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3AQ1 Q2ESD Rating - Machine Model: C NSV Prefix for Automotive and Other Applications Requiri
umc2nt1g nsvumc2nt1g umc3nt1g nsvumc3nt1g umc3nt2g umc5nt1g umc5nt2g nsvumc5nt2g.pdf

UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t
Datasheet: NSVMMBTH10L , NSVMSD1819A-RT1G , NSVS50030SB3 , NSVS50031SB3 , NSVT1418L , NSVUMC2NT1G , NSVUMC3NT1G , NSVUMC5NT2G , BC549 , PN2222ABU , PN2222ATA , PN2222ATF , PN2222ATFR , PN2907ABU , PN2907ATA , PN2907ATAR , PN2907ATF .
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