NSVUMZ1NT1G Specs and Replacement
Type Designator: NSVUMZ1NT1G
SMD Transistor Code: 3Z*
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.187 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 114 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SC88
NSVUMZ1NT1G Substitution
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NSVUMZ1NT1G datasheet
UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount www.onsemi.com Features High Voltage and High Current VCEO = 50 V, IC = 200 mA (6) (5) (4) High hFE hFE = 200X400 Moisture Sensitivity Level 1 ESD Rating - Human Body Model 3A Q1 Q2 ESD Rating - Machine Model C NSV Prefix for Automotive and Other Applications Requiri... See More ⇒
umc2nt1g nsvumc2nt1g umc3nt1g nsvumc3nt1g umc3nt2g umc5nt1g umc5nt2g nsvumc5nt2g.pdf ![]()
UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http //onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC-88A/SOT-353 CASE 419A NPN and PNP Silicon Surface Mount STYLE 6 Transistors with Monolithic Bias Resistor Network 31 2 R1 R2 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of t... See More ⇒
Detailed specifications: NSVMMBTH10L, NSVMSD1819A-RT1G, NSVS50030SB3, NSVS50031SB3, NSVT1418L, NSVUMC2NT1G, NSVUMC3NT1G, NSVUMC5NT2G, 2SD669, PN2222ABU, PN2222ATA, PN2222ATF, PN2222ATFR, PN2907ABU, PN2907ATA, PN2907ATAR, PN2907ATF
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