SNSS30201MR6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: SNSS30201MR6T1G
SMD Transistor Code: VS7*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.535 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TSOP6
SNSS30201MR6T1G Transistor Equivalent Substitute - Cross-Reference Search
SNSS30201MR6T1G Datasheet (PDF)
0.1. Size:204K onsemi
nss30201mr6t1g snss30201mr6t1g.pdf
nss30201mr6t1g snss30201mr6t1g.pdf
NSS30201MR6T1G,SNSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications 30 VOLTSwhere affordable efficien
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DME20102
