All Transistors. BCM53DS Datasheet

 

BCM53DS Datasheet and Replacement


   Type Designator: BCM53DS
   SMD Transistor Code: 3C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.27 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT457
 

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BCM53DS Datasheet (PDF)

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BCM53DS

BCM53DS80 V, 1 A PNP/PNP matched double transistors10 April 2018 Product data sheet1. General descriptionPNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.NPN/NPN complement: BCM56DS2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Cur

Datasheet: BC847RA , BC847RAPN , BC847W-Q , BC856BM , BC857AQA , BC857BQA , BC857CQA , BC857RA , BC327 , BCM56DS , BCM847QAS , BCM856BS-DG , BCM856DS-DG , BCM857QAS , BCP51-10T , BCP51-16T , BCP51T .

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