All Transistors. BCM53DS Datasheet

 

BCM53DS Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCM53DS
   SMD Transistor Code: 3C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.27 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT457

 BCM53DS Transistor Equivalent Substitute - Cross-Reference Search

   

BCM53DS Datasheet (PDF)

 ..1. Size:239K  nxp
 bcm53ds.pdf

BCM53DS BCM53DS

BCM53DS80 V, 1 A PNP/PNP matched double transistors10 April 2018 Product data sheet1. General descriptionPNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.NPN/NPN complement: BCM56DS2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Cur

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D28D4 | 2SD1563A | AF101V

 

 
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