BCM56DS Datasheet, Equivalent, Cross Reference Search
Type Designator: BCM56DS
SMD Transistor Code: 3D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: SOT457
BCM56DS Transistor Equivalent Substitute - Cross-Reference Search
BCM56DS Datasheet (PDF)
..1. Size:239K nxp
bcm56ds.pdf
bcm56ds.pdf
BCM56DS80 V, 1 A NPN/NPN matched double transistors10 April 2018 Product data sheet1. General descriptionNPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.PNP/PNP complement: BCM53DS2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Cur
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KT361G3
