All Transistors. BCM56DS Datasheet

 

BCM56DS Datasheet and Replacement


   Type Designator: BCM56DS
   SMD Transistor Code: 3D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.27 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT457
 

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BCM56DS Datasheet (PDF)

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BCM56DS

BCM56DS80 V, 1 A NPN/NPN matched double transistors10 April 2018 Product data sheet1. General descriptionNPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.PNP/PNP complement: BCM53DS2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Cur

Datasheet: BC847RAPN , BC847W-Q , BC856BM , BC857AQA , BC857BQA , BC857CQA , BC857RA , BCM53DS , TIP31C , BCM847QAS , BCM856BS-DG , BCM856DS-DG , BCM857QAS , BCP51-10T , BCP51-16T , BCP51T , BCP52-10T .

History: KSB834O | 2SD1672 | MD2369 | KRC108M | 2SC5343-O | 2SC2917 | BFW63

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