BCM56DS Datasheet. Specs and Replacement

Type Designator: BCM56DS  📄📄 

SMD Transistor Code: 3D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.27 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: SOT457

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BCM56DS datasheet

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BCM56DS

BCM56DS 80 V, 1 A NPN/NPN matched double transistors 10 April 2018 Product data sheet 1. General description NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement BCM53DS 2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Cur... See More ⇒

Detailed specifications: BC847RAPN, BC847W-Q, BC856BM, BC857AQA, BC857BQA, BC857CQA, BC857RA, BCM53DS, A733, BCM847QAS, BCM856BS-DG, BCM856DS-DG, BCM857QAS, BCP51-10T, BCP51-16T, BCP51T, BCP52-10T

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