PDTA143EQA Datasheet, Equivalent, Cross Reference Search

Type Designator: PDTA143EQA

Material of Transistor: Si

Polarity: PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Maximum Collector Power Dissipation (Pc): 0.28 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT1215

PDTA143EQA Transistor Equivalent Substitute - Cross-Reference Search

PDTA143EQA Datasheet (PDF)

..1. pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf Size:2803K _nxp

PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu

6.1. pdta143eu 4.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors P

6.2. pdta143ee 2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04

6.3. pdta143ek 2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semic

6.4. pdta143es 2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semic

6.5. pdta143et 4.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors P

6.6. pdta143eu 4.pdf Size:58K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EUFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

6.7. pdta143ee 2.pdf Size:57K _philips

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit design

6.8. pdta143ek 2.pdf Size:57K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

6.9. pdta143e series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEETPDTA143E seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 04Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

6.10. pdta143es 2.pdf Size:58K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistorPDTA143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

6.11. pdta143et 4.pdf Size:56K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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PDTA143EQA Datasheet (PDF)

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