PDTA143EQA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA143EQA
Material: Si
Polaridad de transistor: PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.28 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT1215
Búsqueda de reemplazo de transistor bipolar PDTA143EQA
PDTA143EQA Datasheet (PDF)
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PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu
pdta143eu 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EUFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdta143ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit design
pdta143et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdta143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
pdta143es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistorPDTA143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
pdta143eu 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA143EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EUFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdta143e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA143E seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 04Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
pdta143ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit design
pdta143et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design
pdta143ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati
pdta143es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA143ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistorPDTA143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification
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