PDTA143XQA Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTA143XQA
Material of Transistor: Si
Polarity: PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.28 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT1215
PDTA143XQA Transistor Equivalent Substitute - Cross-Reference Search
PDTA143XQA Datasheet (PDF)
..1. pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf Size:2790K _nxp
PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType
6.1. pdta143xt 1.pdf Size:56K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resisto
6.2. pdta143xe 1.pdf Size:55K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped tran
6.3. pdta143xt 1.pdf Size:56K _philips
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XTFEATURES Built-in bias resistors R1 and R2(typ.4.7 k and 10 k respectively)3 Simplification of circuit design handbook, 4 columns3 Reduces
6.4. pdta143xe 1.pdf Size:55K _philips
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 krespectively)handbook, halfpage33 Simplification of circuit designR11 Reduces numbe
6.5. pdta143x.pdf Size:75K _nxp
PDTA143X seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 kRev. 04 16 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family in small plastic packages.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA143XE SOT416 SC-75 - PDTC143XEPDTA143XK SOT346 SC-59A TO-236 PDT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .



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