All Transistors. PDTA143XQA Datasheet

 

PDTA143XQA Datasheet, Equivalent, Cross Reference Search


   Type Designator: PDTA143XQA
   Material of Transistor: Si
   Polarity: PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.28 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT1215

 PDTA143XQA Transistor Equivalent Substitute - Cross-Reference Search

   

PDTA143XQA Datasheet (PDF)

 ..1. Size:2790K  nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf

PDTA143XQA
PDTA143XQA

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType

 6.1. Size:55K  motorola
pdta143xe 1.pdf

PDTA143XQA
PDTA143XQA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 krespectively)handbook, halfpage33 Simplification of circuit designR11 Reduces numbe

 6.2. Size:56K  motorola
pdta143xt 1.pdf

PDTA143XQA
PDTA143XQA

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XTFEATURES Built-in bias resistors R1 and R2(typ.4.7 k and 10 k respectively)3 Simplification of circuit design handbook, 4 columns3 Reduces

 6.3. Size:55K  philips
pdta143xe 1.pdf

PDTA143XQA
PDTA143XQA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 krespectively)handbook, halfpage33 Simplification of circuit designR11 Reduces numbe

 6.4. Size:56K  philips
pdta143xt 1.pdf

PDTA143XQA
PDTA143XQA

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XTFEATURES Built-in bias resistors R1 and R2(typ.4.7 k and 10 k respectively)3 Simplification of circuit design handbook, 4 columns3 Reduces

 6.5. Size:75K  nxp
pdta143x.pdf

PDTA143XQA
PDTA143XQA

PDTA143X seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 kRev. 04 16 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family in small plastic packages.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA143XE SOT416 SC-75 - PDTC143XEPDTA143XK SOT346 SC-59A TO-236 PDT

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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