RF3356 Datasheet, Equivalent, Cross Reference Search
Type Designator: RF3356
SMD Transistor Code: R25
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT23
RF3356 Transistor Equivalent Substitute - Cross-Reference Search
RF3356 Datasheet (PDF)
..1. Size:604K mcc
rf3356.pdf
rf3356.pdf
RF3356Features High Power Gain Low Noise Figure High Cut-off FrequencyNPN RF Wideband Amplifiers and Oscillators.RF Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Informa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
