2SAR533P5 Specs and Replacement

Type Designator: 2SAR533P5

SMD Transistor Code: MM

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 typ MHz

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT89

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2SAR533P5 datasheet

 ..1. Size:1823K  rohm

 2sar533p5.pdf pdf_icon

2SAR533P5

2SAR533P5 Datasheet Medium Power Transistors(-50V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif... See More ⇒

 6.1. Size:1560K  rohm

 2sar533pfra.pdf pdf_icon

2SAR533P5

2SAR533P FRA Datasheet Middle Power Transistor(-50V / -3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPack... See More ⇒

 6.2. Size:1667K  rohm

 2sar533p.pdf pdf_icon

2SAR533P5

2SAR533P Data Sheet PNP -3.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC -3.0A Collector Emitter 2SAR533P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR533P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplicatio... See More ⇒

 7.1. Size:421K  rohm

 2sar533d.pdf pdf_icon

2SAR533P5

Midium Power Transistors ( 50V / 3A) 2SAR533D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 (2) 2) High speed switching 0.75 (3) (1) Structure 0.65 (1) Base 0.9 2.3 2.3 (1) (2) (3) 0.5 PNP Silicon epitaxial planar transistor (2) Collector 1.0 (3) Emitter In... See More ⇒

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Detailed specifications: S8550L-T3, S8550H-T3, 2SA1576U3, 2SA1576U3HZG, 2SAR293P5, 2SAR502U3, 2SAR512P5, 2SAR513P5, TIP42C, 2SAR552P5, 2SAR553P5, 2SAR553PHZG, 2SAR554P5, 2SAR572D3, 2SC4081U3, 2SC4081U3HZG, 2SC5876U3

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