All Transistors. 2SAR533P5 Datasheet

 

2SAR533P5 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SAR533P5
   SMD Transistor Code: MM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300(typ) MHz
   Collector Capacitance (Cc): 24 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT89

 2SAR533P5 Transistor Equivalent Substitute - Cross-Reference Search

   

2SAR533P5 Datasheet (PDF)

 ..1. Size:1823K  rohm
2sar533p5.pdf

2SAR533P5 2SAR533P5

2SAR533P5DatasheetMedium Power Transistors(-50V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif

 6.1. Size:1560K  rohm
2sar533pfra.pdf

2SAR533P5 2SAR533P5

2SAR533P FRADatasheetMiddle Power Transistor(-50V / -3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPack

 6.2. Size:1667K  rohm
2sar533p.pdf

2SAR533P5 2SAR533P5

2SAR533P Data SheetPNP -3.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase IC-3.0ACollector Emitter 2SAR533P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR533P 3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicatio

 7.1. Size:421K  rohm
2sar533d.pdf

2SAR533P5 2SAR533P5

Midium Power Transistors (50V / 3A) 2SAR533D Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyCPT36.55.12.3VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)0.5(2)2) High speed switching0.75(3)(1) Structure0.65(1) Base 0.92.32.3(1) (2) (3)0.5PNP Silicon epitaxial planar transistor(2) Collector1.0(3) Emitter In

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top