2SD1007HQ Specs and Replacement
Type Designator: 2SD1007HQ
SMD Transistor Code: HQ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 typ MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT89
2SD1007HQ Substitution
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2SD1007HQ datasheet
SMD Type Transistors NPN Transistors 2SD1007 1.70 0.1 Features High collector to emitter voltage VCEO 120V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) * IC (pu... See More ⇒
2SD1007 NPN Silicon Epitaxial Transistor FEATURES High collector to emitter voltage VCEO 120V. SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 120 V CBO Co... See More ⇒
Detailed specifications: 2SC4226C, 2SC4226D, 2SC4226E, 2SC4672Q, 2SC4672R, 2SC5053R, 2SD1000K, 2SD1000L, BC337, 2SD1614XL, 2SD1614XM, 2SD1615GK, 2SD1615GL, 2SD1615GM, 2SD1766P, 2SD1766Q, 2SD1766R
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