All Transistors. B722S-E Datasheet

 

B722S-E Datasheet, Equivalent, Cross Reference Search


   Type Designator: B722S-E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80(typ) MHz
   Collector Capacitance (Cc): 55(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

 B722S-E Transistor Equivalent Substitute - Cross-Reference Search

   

B722S-E Datasheet (PDF)

 ..1. Size:451K  cn shikues
 b722s-r b722s-q b722s-p b722s-e.pdf

B722S-E B722S-E

B722SPNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audiofrequency power amplifier and low speed switchingSOT-23 applications1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Colle

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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