B722S-E Specs and Replacement

Type Designator: B722S-E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 typ MHz

Collector Capacitance (Cc): 55 max pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

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B722S-E datasheet

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B722S-E

B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching SOT-23 applications 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Colle... See More ⇒

Detailed specifications: 2SD2150S, 2SD874A-Q, 2SD874A-R, 2SD874A-S, 2SD965-R, 2SD965-S, A1015H, A1015L, A733, B722S-P, B722S-Q, B722S-R, B772GR, B772O, B772R, B772Y, C1815G

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