B722S-P Datasheet, Equivalent, Cross Reference Search
Type Designator: B722S-P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80(typ) MHz
Collector Capacitance (Cc): 55(max) pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23
B722S-P Transistor Equivalent Substitute - Cross-Reference Search
B722S-P Datasheet (PDF)
..1. Size:451K cn shikues
b722s-r b722s-q b722s-p b722s-e.pdf
b722s-r b722s-q b722s-p b722s-e.pdf
B722SPNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audiofrequency power amplifier and low speed switchingSOT-23 applications1BASE 2EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Colle
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
