B722S-P PDF and Equivalents Search

 

B722S-P Specs and Replacement

Type Designator: B722S-P

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80(typ) MHz

Collector Capacitance (Cc): 55(max) pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SOT23

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B722S-P datasheet

 ..1. Size:451K  cn shikues

 b722s-r b722s-q b722s-p b722s-e.pdf pdf_icon

B722S-P

B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching SOT-23 applications 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Colle... See More ⇒

Detailed specifications: 2SD874A-Q , 2SD874A-R , 2SD874A-S , 2SD965-R , 2SD965-S , A1015H , A1015L , B722S-E , S8550 , B722S-Q , B722S-R , B772GR , B772O , B772R , B772Y , C1815G , C1815L .

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