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B722S-Q Specs and Replacement


   Type Designator: B722S-Q
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80(typ) MHz
   Collector Capacitance (Cc): 55(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

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B722S-Q datasheet

 ..1. Size:451K  cn shikues
 b722s-r b722s-q b722s-p b722s-e.pdf pdf_icon

B722S-Q

B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching SOT-23 applications 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Colle... See More ⇒

Detailed specifications: 2SD874A-R , 2SD874A-S , 2SD965-R , 2SD965-S , A1015H , A1015L , B722S-E , B722S-P , 2SC4793 , B722S-R , B772GR , B772O , B772R , B772Y , C1815G , C1815L , C1815O .

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