D882GR Datasheet, Equivalent, Cross Reference Search
Type Designator: D882GR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
D882GR Transistor Equivalent Substitute - Cross-Reference Search
D882GR Datasheet (PDF)
d882r d882o d882q d882gr.pdf
D882TRANSISTOR (NPN) FEATURES Power dissipationSOT-89 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit VCBO Collector-Base Voltage 40 V 2. COLLECTORVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V 3. EMITTERIC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150
d882r d882o d882y d882gr.pdf
SOT -89 Plastic-Encapsulate NPN Transistors FEATURES Power dissipation 0.5W MAXIMUM RATINGS (TA=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) 1 of 2 Typical characteristics 2 of 2
d882r d882o d882y d882gr.pdf
D882 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dis
d882r d882o d882y d882gr.pdf
D882 D882 TRANSISTOR (NPN) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W Thermal Resistance fr
d882r d882o d882y d882gr.pdf
D882 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: D882 Mounting Position: Any(TA = 25
2sd882gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SD882GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.*
Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS