All Transistors. SXT5551 Datasheet

 

SXT5551 Datasheet and Replacement


   Type Designator: SXT5551
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT89
 

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SXT5551 Datasheet (PDF)

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SXT5551

SXT5551High Voltage Transistors DESCRIPTION & FEATURES High Breakdown Voltage(BVCBO=180V) DEVICE MARKINGDEVICE MARKING: SXT5551=G1 SMALL-SIGNAL CHARA CTERISTISTICSSIGNAL CHARA CTERISTISTICS REV.08 1 of 2SXT5551ELECTRICAL CHARACTERISTICS (TCHARACTERISTICS (TA=25 unless otherwise noted) SOT-89SOT-89 DIMENSION SOTREV.08 2 of 2

Datasheet: S8050L , S9012L , S9014T-H , S9014T-L , SS8050W-H , SS8050W-J , SS8050W-L , SXT5401 , 2SC1740 , SZT560A , 13001S , 2SA812M8 , 2SB1132-P , 2SB1132-Q , 2SB1132-R , 2SB1188-P , 2SB1188-Q .

History: 2N2369ACSM | 2SB1626 | S8050H | 2SA930 | 2N3340 | 2SA1261K | 2SC4804

Keywords - SXT5551 transistor datasheet

 SXT5551 cross reference
 SXT5551 equivalent finder
 SXT5551 lookup
 SXT5551 substitution
 SXT5551 replacement

 

 
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