SXT5551 Specs and Replacement
Type Designator: SXT5551
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 max pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT89
SXT5551 Substitution
- BJT ⓘ Cross-Reference Search
SXT5551 datasheet
SXT5551 High Voltage Transistors DESCRIPTION & FEATURES High Breakdown Voltage(BVCBO=180V) DEVICE MARKING DEVICE MARKING SXT5551=G1 SMALL-SIGNAL CHARA CTERISTISTICS SIGNAL CHARA CTERISTISTICS REV.08 1 of 2 SXT5551 ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS (TA=25 unless otherwise noted) SOT-89 SOT-89 DIMENSION SOT REV.08 2 of 2 ... See More ⇒
Detailed specifications: S8050L , S9012L , S9014T-H , S9014T-L , SS8050W-H , SS8050W-J , SS8050W-L , SXT5401 , TIP32C , SZT560A , 13001S , 2SA812M8 , 2SB1132-P , 2SB1132-Q , 2SB1132-R , 2SB1188-P , 2SB1188-Q .
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