All Transistors. SXT5551 Datasheet

 

SXT5551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SXT5551
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT89

 SXT5551 Transistor Equivalent Substitute - Cross-Reference Search

   

SXT5551 Datasheet (PDF)

 ..1. Size:314K  cn shikues
 sxt5551.pdf

SXT5551 SXT5551

SXT5551High Voltage Transistors DESCRIPTION & FEATURES High Breakdown Voltage(BVCBO=180V) DEVICE MARKINGDEVICE MARKING: SXT5551=G1 SMALL-SIGNAL CHARA CTERISTISTICSSIGNAL CHARA CTERISTISTICS REV.08 1 of 2SXT5551ELECTRICAL CHARACTERISTICS (TCHARACTERISTICS (TA=25 unless otherwise noted) SOT-89SOT-89 DIMENSION SOTREV.08 2 of 2

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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