All Transistors. BFG425W-TOB Datasheet

 

BFG425W-TOB Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFG425W-TOB
   SMD Transistor Code: 3K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.135 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25000(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT343R

 BFG425W-TOB Transistor Equivalent Substitute - Cross-Reference Search

   

BFG425W-TOB Datasheet (PDF)

 ..1. Size:872K  slkor
bfg425w-tob.pdf

BFG425W-TOB
BFG425W-TOB

 7.1. Size:143K  philips
bfg425w.pdf

BFG425W-TOB
BFG425W-TOB

DISCRETE SEMICONDUCTORS DATA SHEETBFG425WNPN 25 GHz wideband transistorProduct specification 2010 Sep 15Supersedes data of 1998 Mar 11NXP Semiconductors Product specificationNPN 25 GHz wideband transistor BFG425WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1emitter High transition frequency2base Emitter is thermal lead3emitte

 7.2. Size:90K  philips
bfg425w 4.pdf

BFG425W-TOB
BFG425W-TOB

DISCRETE SEMICONDUCTORSBFG425WNPN 25 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 28File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 25 GHz wideband transistor BFG425WFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 base

 7.3. Size:1657K  kexin
bfg425w.pdf

BFG425W-TOB
BFG425W-TOB

SMD Type TransistorsNPN TransistorsBFG425W (KFG425W)SOT-343R Unit:mm2.00.21.250.1AX Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V0~0.12.10.11.30(Typ) Very high power gain3 4 Low noise figure0.23 (max)0.13 (min) High transition frequency2 10.45(max)0.350.05 0.600.10.1(max)0.15(max

 7.4. Size:210K  inchange semiconductor
bfg425w.pdf

BFG425W-TOB
BFG425W-TOB

isc Silicon NPN RF Transistor BFG425WDESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in RF wideband amplifiers and oscillators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 10 VCBO

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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