BFG425W-TOB Datasheet and Replacement

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte

SMD Type Transistors NPN Transistors BFG425W (KFG425W) SOT-343R Unit mm 2.0 0.2 1.25 0.1 A X Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V 0 0.1 2.1 0.1 1.30(Typ) Very high power gain 3 4 Low noise figure 0.23 (max) 0.13 (min) High transition frequency 2 1 0.45(max) 0.35 0.05 0.60 0.1 0.1(max) 0.15(max

isc Silicon NPN RF Transistor BFG425W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 10 V CBO