BFG425W-TOB Datasheet. Specs and Replacement
Type Designator: BFG425W-TOB 📄📄
SMD Transistor Code: 3K
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.135 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25000 typ MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT343R
BFG425W-TOB Substitution
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BFG425W-TOB datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte... See More ⇒
SMD Type Transistors NPN Transistors BFG425W (KFG425W) SOT-343R Unit mm 2.0 0.2 1.25 0.1 A X Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V 0 0.1 2.1 0.1 1.30(Typ) Very high power gain 3 4 Low noise figure 0.23 (max) 0.13 (min) High transition frequency 2 1 0.45(max) 0.35 0.05 0.60 0.1 0.1(max) 0.15(max... See More ⇒
Detailed specifications: 850AT, 850BT, 850CT, 857AW, 857BW, 858AW, 858BW, BCP68-16, 2SB817, BFG520-X, BFG520-XR, CZT5551A, CZT5551C, CZT5551N, D882Q, MBT3946, MJD122D
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