D882Q Datasheet. Specs and Replacement

Type Designator: D882Q  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

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D882Q datasheet

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D882Q

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D882Q

D882 AO3400 SI2305 D882 NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10... See More ⇒

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D882Q

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas... See More ⇒

Detailed specifications: 858BW, BCP68-16, BFG425W-TOB, BFG520-X, BFG520-XR, CZT5551A, CZT5551C, CZT5551N, 2N4401, MBT3946, MJD122D, MJD127D, MMBTA56G, MMBTA56H, PBSS304, S8050TH, S8050TJ

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