All Transistors. 2SC3998T7TL Datasheet

 

2SC3998T7TL Datasheet and Replacement


   Type Designator: 2SC3998T7TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3PL
 

 2SC3998T7TL Substitution

   - BJT ⓘ Cross-Reference Search

   

2SC3998T7TL Datasheet (PDF)

 ..1. Size:1278K  cn sps
2sc3998t7tl.pdf pdf_icon

2SC3998T7TL

2SC3998T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector

 7.1. Size:85K  sanyo
2sc3998.pdf pdf_icon

2SC3998T7TL

Ordering number:EN2732NPN Triple Diffused Planar Silicon Transistor2SC3998Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (adoption of HVP process).[2SC3998] Adoption of MBIT process.20.03.35.02.03.40.6

 7.2. Size:170K  cn sptech
2sc3998.pdf pdf_icon

2SC3998T7TL

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba

 7.3. Size:634K  cn xch
2sc3998.pdf pdf_icon

2SC3998T7TL

2SC3998NPN Triple Diffused Planar Silicon TransistorDESCRIPTION High speed High breakdown voltage High reliability (adoption of HVP process).Collector Adoption of MBIT process.BasePINNING EmitterPIN DESCRIPTIONEC 1 Base BCollector;connected to Fig.1 simplified outline (TO-3PL) and symbol 2mounting base 3 Emitter

Datasheet: 2SC2246T3BL , 2SC2625T4TL , 2SC3320T4TL , 2SC3834T1TL , 2SC3835T4TL , 2SC3856T4TL , 2SC3907T4TL , 2SC3997T7TL , TIP3055 , 2SC4110T4TL , 2SC4131T5TL , 2SC4237T8TL , 2SC4552T2TL , 2SC5027T1TL , 2SC5198T7TL , 2SC5200T7TL , 2SC5570T7TL .

History: P605 | SD1272 | TK36

Keywords - 2SC3998T7TL transistor datasheet

 2SC3998T7TL cross reference
 2SC3998T7TL equivalent finder
 2SC3998T7TL lookup
 2SC3998T7TL substitution
 2SC3998T7TL replacement

 

 
Back to Top

 


 
.