2SC3998T7TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3998T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector

Ordering number:EN2732NPN Triple Diffused Planar Silicon Transistor2SC3998Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (adoption of HVP process).[2SC3998] Adoption of MBIT process.20.03.35.02.03.40.6

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba

2SC3998NPN Triple Diffused Planar Silicon TransistorDESCRIPTION High speed High breakdown voltage High reliability (adoption of HVP process).Collector Adoption of MBIT process.BasePINNING EmitterPIN DESCRIPTIONEC 1 Base BCollector;connected to Fig.1 simplified outline (TO-3PL) and symbol 2mounting base 3 Emitter

isc Silicon NPN Power Transistor 2SC3998DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO