ISCN440P Specs and Replacement

Type Designator: ISCN440P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220C

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ISCN440P datasheet

 ..1. Size:237K  inchange semiconductor

 iscn440p.pdf pdf_icon

ISCN440P

isc Silicon NPN Power Transistor ISCN440P DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 1.1V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

Detailed specifications: NJW0281GT4TL, NJW0302GT4TL, NJW1302GT4TL, NJW3281GT4TL, TIP35CT4TL, TIP36CT4TL, CD568B, ISCE1938P, 2SA1837, ISCND436D, 2SC2222H, BC807-16W-AU, BC807-25W-AU, BC807-40W-AU, BC817-16-AU, BC817-25-AU, BC817-40-AU

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