All Transistors. ISCND436D Datasheet

 

ISCND436D Datasheet and Replacement


   Type Designator: ISCND436D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO252
 
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ISCND436D Datasheet (PDF)

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ISCND436D

isc Silicon NPN Power Transistor ISCND436DDESCRIPTIONCollectorEmitter Sustaining VoltageV 500V(Min)CEO:Low Collector Saturation Voltage: V =1.3V(Max.)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B , ISCE1938P , ISCN440P , 8050 , 2SC2222H , BC807-16W-AU , BC807-25W-AU , BC807-40W-AU , BC817-16-AU , BC817-25-AU , BC817-40-AU , BC848BW-AU .

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