ISCND436D Datasheet, Equivalent, Cross Reference Search
Type Designator: ISCND436D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO252
ISCND436D Transistor Equivalent Substitute - Cross-Reference Search
ISCND436D Datasheet (PDF)
..1. Size:334K inchange semiconductor
iscnd436d.pdf
iscnd436d.pdf
isc Silicon NPN Power Transistor ISCND436DDESCRIPTIONCollectorEmitter Sustaining VoltageV 500V(Min)CEO:Low Collector Saturation Voltage: V =1.3V(Max.)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
