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ISCND436D Specs and Replacement

Type Designator: ISCND436D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO252

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ISCND436D datasheet

 ..1. Size:334K  inchange semiconductor

 iscnd436d.pdf pdf_icon

ISCND436D

isc Silicon NPN Power Transistor ISCND436D DESCRIPTION Collector Emitter Sustaining Voltage V 500V(Min) CEO Low Collector Saturation Voltage V =1.3V(Max.)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

Detailed specifications: NJW0302GT4TL , NJW1302GT4TL , NJW3281GT4TL , TIP35CT4TL , TIP36CT4TL , CD568B , ISCE1938P , ISCN440P , BC546 , 2SC2222H , BC807-16W-AU , BC807-25W-AU , BC807-40W-AU , BC817-16-AU , BC817-25-AU , BC817-40-AU , BC848BW-AU .

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