9012I Datasheet. Specs and Replacement

Type Designator: 9012I  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

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9012I datasheet

 ..1. Size:170K  semtech

 9012g 9012h 9012i.pdf pdf_icon

9012I

9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absol... See More ⇒

 0.1. Size:199K  mcc

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9012I

S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a... See More ⇒

Detailed specifications: 8050B, 8050D, 8050E, 8050U-C, 8050U-D, 8550B, 8550D, 8550E, BC547, 9013I, 9014A, 9014B, 9014C, 9018G, BCX56-10U, BCX56-16U, MMBT3331

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