MRF857 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MRF857
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 17 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Collector Capacitance (Cc): 3.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: CASE305-01

MRF857 Transistor Equivalent Substitute - Cross-Reference Search

MRF857 Datasheet (PDF)

..1. Size:150K motorola
mrf857 mrf857s.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF857/DThe RF LineMRF857NPN SiliconMRF857SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characterist

0.1. Size:103K motorola
mrf857rev3.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF857/DThe RF LineNPN SiliconMRF857SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics2.1

0.2. Size:150K motorola
mrf857re.pdf