2SC3356-T93-R-K Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3356-T93-R-K
SMD Transistor Code: R25_R24_R23
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
2SC3356-T93-R-K Transistor Equivalent Substitute - Cross-Reference Search
2SC3356-T93-R-K Datasheet (PDF)
2sc3356-sc1-r-r 2sc3356-sf3-r-r 2sc3356-sd3-r-r 2sc3356-t93-r-k.pdf
2SC3356 (NPN) High-Frequency Amplifier Transistor 1TO-92 3FEATURES 2* SOT231Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA3* High power gain. 21MAG=13dB Typ.@Vce=10V,Ic=20mAf=1.0 GHz SOT-23-3L321SOT-5231:B 2:E 3:C
2sc3356-r25.pdf
2SC3356-R25Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C
2sc3356-r23 2sc3356-r24 2sc3356-r25 2sc3356-r26.pdf
2SC3356NPN Transistors3Features2Low noise and high gain.1. GateNF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz2. Source13. DrainHigh power gain.MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Simplified outline(SOT23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector to emitter
Datasheet: MMBT5551Q , MMBTA06Q , S8050-H , S8050-L , S9013L , S9015H , S9015L , 2SA812H , BC549 , 2SC1623-L4 , 2SC2412Q , 2SC2412R , 2SC2412S , 2SC3356-SC1-R-R , 2SC3356-SD3-R-R , 2SC3356-SF3-R-R , 2SC3356-T93-R-K .
