3DD13003F6 Datasheet. Specs and Replacement

Type Designator: 3DD13003F6  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO126

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Detailed specifications: SS8550L, SS8550-Y2-H, SS8550-Y2-J, SS8550-Y2-L, 29012H, 2SC4617Q, 2SC4617R, 2SC4617S, BD336, B772E, B772Q, D882E, MMBT3904N3, MMBTH10A, MMBTH10B, MMBTH10C, PXT8050-D1

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