3DD13003F6 Specs and Replacement
Type Designator: 3DD13003F6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO126
3DD13003F6 Substitution
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3DD13003F6 datasheet
NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W ... See More ⇒
Detailed specifications: SS8550L , SS8550-Y2-H , SS8550-Y2-J , SS8550-Y2-L , 29012H , 2SC4617Q , 2SC4617R , 2SC4617S , TIP31 , B772E , B772Q , D882E , MMBT3904N3 , MMBTH10A , MMBTH10B , MMBTH10C , PXT8050-D1 .
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