SEBC847CU Datasheet, Equivalent, Cross Reference Search
Type Designator: SEBC847CU
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SC70
SEBC847CU Transistor Equivalent Substitute - Cross-Reference Search
SEBC847CU Datasheet (PDF)
..1. Size:200K cn sino-ic
sebc847bu sebc847cu.pdf
sebc847bu sebc847cu.pdf
SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision:A External dimensions (Units : mm) Features BVCEO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .