SEBC847CU Datasheet. Specs and Replacement

Type Designator: SEBC847CU  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 typ MHz

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SC70

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SEBC847CU datasheet

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SEBC847CU

SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision A External dimensions (Units mm) Features BVCEO ... See More ⇒

Detailed specifications: MMBTH10B, MMBTH10C, PXT8050-D1, PXT8050-D2, PXT8550D1, PXT8550D2, S8550E, SEBC847BU, 2SC2655, SEBT3904U, SEBT3906U, SEBT8050-C, SEBT8050-D, SEBT818BA, SEBT9012, SEBT9013, SEBT9014

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