SEBT818BA Datasheet, Equivalent, Cross Reference Search
Type Designator: SEBT818BA
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23-6L
SEBT818BA Transistor Equivalent Substitute - Cross-Reference Search
SEBT818BA Datasheet (PDF)
sebt818ba.pdf
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SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision:A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR
sebt8050-c sebt8050-d.pdf
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SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .