All Transistors. SEBT818BA Datasheet

 

SEBT818BA Datasheet and Replacement


   Type Designator: SEBT818BA
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23-6L
 

 SEBT818BA Substitution

   - BJT ⓘ Cross-Reference Search

   

SEBT818BA Datasheet (PDF)

 ..1. Size:225K  cn sino-ic
 sebt818ba.pdf pdf_icon

SEBT818BA

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision:A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR

 9.1. Size:509K  cn sino-ic
 sebt8050-c sebt8050-d.pdf pdf_icon

SEBT818BA

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N6676 | BC860ALT1 | SBT3904U | 2N4134 | 2N4143 | CHDTA114GKGP

Keywords - SEBT818BA transistor datasheet

 SEBT818BA cross reference
 SEBT818BA equivalent finder
 SEBT818BA lookup
 SEBT818BA substitution
 SEBT818BA replacement

 

 
Back to Top

 


 
.