SEBT818BA Specs and Replacement
Type Designator: SEBT818BA
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23-6L
SEBT818BA Substitution
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SEBT818BA datasheet
SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR ... See More ⇒
SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050 Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA ... See More ⇒
Detailed specifications: PXT8550D2 , S8550E , SEBC847BU , SEBC847CU , SEBT3904U , SEBT3906U , SEBT8050-C , SEBT8050-D , 2222A , SEBT9012 , SEBT9013 , SEBT9014 , SEBT9015 , SEBT9016 , SEBT9018 , SS8050B , SS8050C .
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