All Transistors. SEBT818BA Datasheet

 

SEBT818BA Datasheet and Replacement


   Type Designator: SEBT818BA
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23-6L
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SEBT818BA Datasheet (PDF)

 ..1. Size:225K  cn sino-ic
 sebt818ba.pdf pdf_icon

SEBT818BA

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision:A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR

 9.1. Size:509K  cn sino-ic
 sebt8050-c sebt8050-d.pdf pdf_icon

SEBT818BA

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: FMMTA42 | BCY58DP | RN2701JE | HSBD176 | 2SC1458 | 2SC631A | CMST5087

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