GN1A3Q PDF and Equivalents Search

GN1A3Q Specs and Replacement

Type Designator: GN1A3Q

SMD Transistor Code: M83

Material of Transistor: Si

Polarity: PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT323

- BJT ⓘ Cross-Reference Search

GN1A3Q datasheet

Detailed specifications: 2SA73H , 2SA73L , S9012J , S9018L , 2SC3080 , 2SD661A , 2SD662B , D965-KEHE , BDT88 , SL13003 , CD8050B , CD8050C , CD8050D , 3DD13005A , 3DD13005D , 3DD13005ED , 3DD13005MD .

History: BC635-16 | BC636-16

Keywords - GN1A3Q pdf specs

 GN1A3Q cross reference

 GN1A3Q equivalent finder

 GN1A3Q pdf lookup

 GN1A3Q substitution

 GN1A3Q replacement