CD8050B Datasheet, Equivalent, Cross Reference Search
Type Designator: CD8050B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 20(max) pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO92
CD8050B Transistor Equivalent Substitute - Cross-Reference Search
CD8050B Datasheet (PDF)
cd8050b cd8050c cd8050d.pdf
Continental Device India Pvt. LimitedAn IATF 16949, ISO9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS CD8050TO-92Leaded PackageRoHS compliantABSOLUTE MAXIMUM RATINGS (Ta = 25 OC)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 40 VCollector -Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 ACollector Power Dissipat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .