3DD5605Z Datasheet. Specs and Replacement
Type Designator: 3DD5605Z 📄📄
SMD Transistor Code: D5605Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
3DD5605Z Substitution
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3DD5605Z datasheet
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A C V 600V CEO P 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig... See More ⇒
isc Silicon NPN Power Transistor 3DD5606 DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA ... See More ⇒
Detailed specifications: 3DD4618H, 3DD4802, 3DD4804, 3DD5017P, 3DD5023P, 3DD5032P, 3DD5036P, 3DD5038P, 2SA1837, 3DFH3504Z, BA15N23A, BA15N26A, BA15N26B, BA15P23A, BA15P26A, BA15P26B, BA16N25A
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History: BCX5416 | MP8533 | 3DD5017P | L2SC2412KSLT1G | BTD2195J3 | 3DD5038P | MRF453A
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