3DD5605Z Datasheet. Specs and Replacement

Type Designator: 3DD5605Z  📄📄 

SMD Transistor Code: D5605Z

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

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3DD5605Z datasheet

 ..1. Size:534K  jilin sino

3dd5605z.pdf pdf_icon

3DD5605Z

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A C V 600V CEO P 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig... See More ⇒

 8.1. Size:209K  inchange semiconductor

3dd5606.pdf pdf_icon

3DD5605Z

isc Silicon NPN Power Transistor 3DD5606 DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 9.1. Size:151K  china

3dd56.pdf pdf_icon

3DD5605Z

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA ... See More ⇒

Detailed specifications: 3DD4618H, 3DD4802, 3DD4804, 3DD5017P, 3DD5023P, 3DD5032P, 3DD5036P, 3DD5038P, 2SA1837, 3DFH3504Z, BA15N23A, BA15N26A, BA15N26B, BA15P23A, BA15P26A, BA15P26B, BA16N25A

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