All Transistors. 3DD5605Z Datasheet

 

3DD5605Z Datasheet and Replacement


   Type Designator: 3DD5605Z
   SMD Transistor Code: D5605Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
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3DD5605Z Datasheet (PDF)

 ..1. Size:534K  jilin sino
 3dd5605z.pdf pdf_icon

3DD5605Z

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A CV 600V CEOP 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig

 8.1. Size:209K  inchange semiconductor
 3dd5606.pdf pdf_icon

3DD5605Z

isc Silicon NPN Power Transistor 3DD5606DESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 9.1. Size:151K  china
 3dd56.pdf pdf_icon

3DD5605Z

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | KRC655U | PHPT60406NY | KSA643Y | CS9011I | CSA1302RF | LDTA115EET1G

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