All Transistors. 3DD5605Z Datasheet

 

3DD5605Z Datasheet and Replacement


   Type Designator: 3DD5605Z
   SMD Transistor Code: D5605Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
 

 3DD5605Z Substitution

   - BJT ⓘ Cross-Reference Search

   

3DD5605Z Datasheet (PDF)

 ..1. Size:534K  jilin sino
 3dd5605z.pdf pdf_icon

3DD5605Z

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A CV 600V CEOP 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig

 8.1. Size:209K  inchange semiconductor
 3dd5606.pdf pdf_icon

3DD5605Z

isc Silicon NPN Power Transistor 3DD5606DESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 9.1. Size:151K  china
 3dd56.pdf pdf_icon

3DD5605Z

3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA

Datasheet: 3DD4618H , 3DD4802 , 3DD4804 , 3DD5017P , 3DD5023P , 3DD5032P , 3DD5036P , 3DD5038P , BC546 , 3DFH3504Z , BA15N23A , BA15N26A , BA15N26B , BA15P23A , BA15P26A , BA15P26B , BA16N25A .

Keywords - 3DD5605Z transistor datasheet

 3DD5605Z cross reference
 3DD5605Z equivalent finder
 3DD5605Z lookup
 3DD5605Z substitution
 3DD5605Z replacement

 

 
Back to Top

 


 
.