3DD5605Z Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD5605Z
SMD Transistor Code: D5605Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
3DD5605Z Transistor Equivalent Substitute - Cross-Reference Search
3DD5605Z Datasheet (PDF)
3dd5605z.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD5605Z MAIN CHARACTERISTICS Package I 5A CV 600V CEOP 100W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply Hig
3dd5606.pdf
isc Silicon NPN Power Transistor 3DD5606DESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
3dd56.pdf
3DD56/3DD57 NPN A B C D E F PCM TC=75 10 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=3mA 30 50 80 110 150 200 V V(BR)CEO ICE=3mA 30 50 80 110 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 0.5 mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
